Why area might reduce power in nanoscale CMOS

 

In IEEE International Symposium on Circuits and Systems, 2005, (ISCAS 2005)

Paul Beckett and Seth Copen Goldstein

volume 3, pages 2329–2332, Kobe, Japan

May, 2005

Abstract


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@inproceedings{beckett-iscas05,
  title = {Why area might reduce power in nanoscale CMOS},
  url = {http://www.cs.cmu.edu/~seth/papers/beckett-iscas05.pdf},
  booktitle = {IEEE International Symposium on Circuits and Systems,
     2005, (ISCAS 2005)},
  author = {Beckett, Paul and Goldstein, Seth Copen},
  year = {2005},
  pages = {2329-2332},
  volume = {3},
  month = {May},
  address = {Kobe, Japan},
  abstract = {In this paper we explore the relationship between power
     and area. By exploiting parallelism (and thus using more area)
     one can reduce the switching frequency allowing a reduction in
     VDD which results in a reduction in power. Under a scaling regime
     which allows threshold voltage to increase as VDD decreases we
     find that dynamic and subthreshold power loss in CMOS exhibit a
     dependence on area proportional to A^((\sigma^-3)/\sigma) while
     gate leakage power proportional to A^((\sigma^-6)/\sigma) and
     short circuit power A^((\sigma^-6)/\sigma). Thus, with the large
     number of devices at our disposal we can exploit techniques such
     as spatial computing--tailoring the program directly to the
     hardware--to overcome the negative effects of scaling. The value
     of s describes the effectiveness of the technique for a
     particular circuit and/or algorithm--for circuits that exhibit a
     value of \sigma <= 3, power will be a constant or reducing
     function of area. We briefly speculate on how \sigma might be
     influenced by a move to nanoscale technology.},
  keywords = {Electronic Nanotechnology,Power,Energy}
}

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Why area might reduce power in nanoscale CMOS
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Why area might reduce power in nanoscale CMOS
Paul Beckett and Seth Copen Goldstein. In IEEE International Symposium on Circuits and Systems, 2005, (ISCAS 2005), volume 3, pages 2329–2332,May, 2005.


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