Ion Mill Sample: 20 min oxide etch (Click to enlarge)
Ion Mill Sample: 10 min oxide etch (Click to enlarge)
MEMS Course Characterization Mask : Entire processing (Click to enlarge)
On September 21st we took more SEMs after doing 20 minutes more of xenon difluoride etching (60 second cycles, 3 Torr XeF2, 0 Torr N2). Its hard to tell whether the 20 minute oxide etch sample has more residue than the 10 minute oxide etch, I think its slightly better.
Matte was actuating the membranes on Friday and we were able to see the membranes deflect completely and return to their original state (there was approximately a 20 micron gap). Therefore, since John's processing uses the DRIE to etch a deep gap between the membrane and substrate, I believe he should not have any problems with the membrane sticking. The residue shouldn't hinder us as long as the silicon substrate is a sufficient distance from the aluminum membrane.
You can also see the MEMS course resonator at the bottom. As in our MOSIS and AMS processing, there is a significant amount of curl. Matte was worried that this would hinder the student designs for the course. We can order wafers that have a different aluminum or oxide thickness to counteract the curling.
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Ion Mill Sample: 20 min oxide etch (Click to enlarge) |
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Ion Mill Sample: 10 min oxide etch (Click to enlarge) |
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MEMS Course Characterization Mask : Entire processing (Click to enlarge) |
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