Ion Mill Sample: Entire processing (Click to enlarge)
Ion Mill Sample: 10 min oxide etch (Click to enlarge)
MEMS Course Characterization Mask : Entire processing (Click to enlarge)
Seems that we are having the same problems as before with this residual stringer material in between and below the serpentine structure (see the first 4 pictures below). These stringers will not allow the structures to actuate freely, yet it can be pr evented if there is a deeper silicon etch, thus preventing the membranes from touching the silicon substrate.
The next two pictures are after a 10 minute oxide etch, no silicon etch. We have been doing a 20 minute oxide etch that has been also etching the silicon substrate. On these samples there is no observable residual stringer material, thus I believe we are over etching the oxide and causing the aluminum to resputter.
For larger features structures from the MEMS Course characterization mask, they all look fine. Not much residual material.
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Ion Mill Sample: Entire processing (Click to enlarge) |
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Ion Mill Sample: 10 min oxide etch (Click to enlarge) |
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MEMS Course Characterization Mask : Entire processing (Click to enlarge) |
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