Mock CMOS Processing Update

Ion mill sample: Metal etch

Below is the trial that John performed down in the cleanroom using the Commonwealth Scientific Ion Beam Etching System. You can see the machine at this web address. http://www.ece.cmu.edu/research/dssc/nanofab/equipment/machines/ionmill.html

Here is what the processing steps were:
Photoresist Patterning
Photoresist used: Shipley S1813
Spin speed: 4000 rpm
Approx. thickness: 1.5 um
Softbake: 90 seconds at 110C on hot plate
Exposure time: 5.3 seconds
Development: 1:1 MIF-312:DI water
Hard Bake: 20 minutes at 120C on oven

Ion Mill Etch
Type of etch: Dry Anisotropic Etch
Machine used: Commonwealth Scientific Ion Beam Etching System
Temperature of etch: Very Hot
Etch time: 45 minutes

Ion Mill Sample: Metal Etch (Click to enlarge)