Processing Problems

Aluminum and Oxide Etching Attempt

Here is what the processing steps were:
Photoresist Patterning
Photoresist used: Shipley S1813
Spin speed: 4000 rpm
Approx. thickness: 1.5 um
Softbake: 90 seconds at 100C on hot plate
Exposure time: 5.3 seconds
Development: 1:1 MIF-312:DI water
Hard Bake: 20 minutes at 120C on oven

Aluminum Etch
Type of etch: Wet Isotropic Etch
Chemical used: Transene Type APre-mixed Aluminum Etch
Machine used: None
Temperature of etch: 45-50 degrees Celsius
Advertised etch rate: 100 Angstroms/minute
Etch time: Three samples:30 seconds, 36 seconds, 42 seconds

Silicon Dioxide Etch
Type of etch: Reactive Ion Etch (Anisotropic)
Chemical used: Trifluoromethane (CHF3) and Oxygen
Machine used: PlasmaTherm 790 RIE
Temperature of etch: In Plasma
Power: 100W
Gasses: 22.5 sccm CHF3; 5 sccm O2
Etch time: 60 minutes

30 second etch sample (Click to enlarge)

36 second etch sample(Click to enlarge)

42 second etch sample(Click to enlarge)