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Nassda Releases Version 1.3 of HSIM with Billion Transistor Capacity; Nanometer Full-Chip Circuit Simulator Provides New Analysis and Device Support   SANTA CLARA, Calif., Jun 4, 2001 (BUSINESS WIRE) -- Nassda Corp. today announced version 1.3 of HSIM(TM), the latest release of the electronic design automation industry's first hierarchical full-chip circuit simulator. Targeted to designers of analog, mixed-signal, memory and system-on-chip (SOC) integrated circuits, HSIM provides detailed circuit-level analysis of timing and power behavior, and signal integrity effects. This release delivers new analysis and device support along with enhanced interoperability with other design tools.   "I want to commend Nassda for producing such a product for the memory and mixed signal industry," said Puck Wong of Broadcom Corp. "This is truly a significant and substantial development for mixed-signal circuit designers. Nassda's support for Broadcom also has been outstanding. We are extremely happy with HSIM."   "HSIM version 1.3 further enhances the accuracy, performance, device model support and nanometer analysis we offer to designers," said Sang Wang, CEO of Nassda. "Over 80 customers are using our technology in their design flows. This commercial success has confirmed our hierarchical approach to circuit analysis for analog, mixed-signal, memory and SOC designs. This technology will become even more widely adopted by the design community as they move into geometries at 180nm and below."   HSIM Solves Critical Customer Issue  HSIM solves the critical issue of analyzing circuit behavior while taking into account the electrical and parasitic effects of nanometer scale silicon. Before the availability of HSIM, design teams were unable to analyze these effects with a tool that had the speed, accuracy, and capacity that was needed. In a recent benchmark, HSIM verified a 50 million transistor network processor in just over 13 hours on a 32-bit workstation with 512Meg of RAM. HSIM's ability to address critical verification issues is reflected in HSIM's dramatic rate of adoption by design teams throughout the world.   HSIM Technology  Nassda created HSIM to perform full-chip circuit simulation and analysis with accuracy within 1-2% of SPICE but at speeds three to four orders of magnitude faster than SPICE. HSIM uses a patent-pending hierarchical technology to deliver a capacity of over one billion transistors, and is targeted to both pre- and post-layout analysis of circuits.   "HSIM version 1.3 further strengthens our leadership in full-chip nanometer circuit simulation and analysis with unprecedented performance and capacity," stated Dr. An-Chang Deng, President of Nassda. "HSIM's capability of annotating both layout parasitic and device geometry information to a pre-layout netlist is essential for efficient verification and optimization of design implementations. HSIM enables first silicon success."   New Device Models  HSIM now supports simulation of JFETs, found in communication designs, using the same model found in SPICE simulators. Another development for designers of high-speed systems is the ability to analyze signal integrity effects with a lossy transmission line model. As well, the latest MOS device model from U.C. Berkeley for nanometer-scale devices, BSIM4, is now supported. The existing silicon-on-insulator (SOI) device model has been improved in accuracy by working closely with Nassda's customers. With each new release, HSIM continues to incorporate the latest developments from industry and academic research.   Enhanced Netlist Back-Annotation  HSIM version 1.3 provides enhanced support for the back-annotation of parasitic RC data in DSPF format, and MOS device geometry information including device size, parasitics and resistivity. Since they account for post-layout effects, back-annotation of DSPF and MOS device data is necessary for accurate analysis of signal integrity, and timing and power behavior.   New Spectral Analysis  With version 1.3, HSIM now provides spectral analysis by means of the fast Fourier transform (FFT). Performed interactively or after transient simulation, HSIM enables frequency analysis of communication circuits. This new capability provides industry-standard windowing functions for conditioning the analysis data as needed by designers.   Interoperability  HSIM version 1.3 delivers improved interoperability with other design tools by providing an application programming interface (API) for working with customers' internal waveform viewers. The new release also provides a user modeling interface (UMI) to integrate customer-proprietary device models.   Pricing and Availability  HSIM Version 1.3 is now available, and is supported on workstations running Sun Solaris, HP-UX, Microsoft Windows NT/2000, and Linux operating systems. U.S. prices start at $85,000.   About Nassda  Nassda Corporation (Santa Clara, California) develops and markets full-chip nanometer circuit simulation and analysis solutions for advanced IC designs, especially for analog, memory and mixed-signal systems-on-a-chip designs. Nassda's HSIM product is the leading post-layout verification and analysis tool for achieving first silicon success and improving product quality and production yield. Nassda has sales offices in Europe and North America, and is represented by distributors in Japan and the rest of Asia. For more information about Nassda, please check the company's website at http://www.nassda.com.   Note to Editors: HSIM is a trademark of Nassda Corporation. All other trademarks and registered trademarks are the property of their owners.   CONTACT:          Nassda Corporation                              Graham Bell, 408/562-9168 x229                             gbell@nassda.com                                or                   Lee Public Relations                   Pam Wasserman, 650/363-0142                         pam@leepr.com        URL:              http://www.businesswire.com Today's News On The Net - Business Wire's full file on the Internet with Hyperlinks to your home page.  Copyright (C) 2001 Business Wire.  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